Field emission from chemical vapor deposition diamond surface with graphitic patches

被引：15
|
作者：
Cui, JB [1 ]
Robertson, J [1 ]
机构：
[1] Univ Cambridge, Dept Engn, Cambridge CB2 1PZ, England
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2002年 / 20卷 / 01期
关键词：
D O I：
10.1116/1.1434972
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The field emission properties of a polycrystalline diamond film with hydrogenated and hydrogen free surfaces have been investigated by monitoring both the emission current-voltage curve and emission site density. A very low turn-on field of electron emission was found to be 0.5 V/mum for the hydrogenated surface and 4 V/mum for the hydrogen free surface. The emission site densities were significantly reduced from 3 x 10(3) to 2 x 10(2) cm(-2) at 5 V/mum after the surface hydrogen desorption. The low turn-on field and high emission site density on the hydrogenated surface are explained by the low work function of diamond combined with graphitic patches on the surface. (C) 2002 American Vacuum Society.
引用
收藏
页码：238 / 242
页数：5
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