Mechanism of field emission from a highly phosphorous-doped chemical vapor deposition diamond (111) surface

被引：0

作者：

Kono, Shozo ^{[1
,2
]}

Takyo, Go ^{[1
]}

Amano, Naoki ^{[1
]}

Plusnin, Nickolay I. ^{[1
,4
]}

Mizuochi, Kenji ^{[1
]}

Aoyama, Tomohiro ^{[1
,5
]}

Goto, Tadahiko ^{[1
]}

Abukawa, Tadashi ^{[1
]}

Namba, Akihiko ^{[3
]}

Tasumi, Natsuo ^{[3
]}

Nishibayashi, Yoshiki ^{[3
]}

Imai, Takahiro ^{[3
]}

机构：

[1] IMRAM, Tohoku University, Sendai 980-8577, Japan

[2] CREST, JST, Tokyo 150-0011, Japan

[3] Sumitomo Electric Industries, Ltd., Itami, Hyogo 664-0016, Japan

[4] IACP, Far Eastern Branch, Russian Academy of Science, Vladivostok 690041, Russia

[5] Steel Research Laboratory, JFE Steel Corporation, Kawasaki 210-0855, Japan

来源：

Japanese Journal of Applied Physics, Part 2: Letters | 2007年 / 46卷 / 1-3期

关键词：

The mechanism of field emission from a highly P-doped diamond (111) surface has been studied by field/photo emission electron micro-spectroscopy. It was found that field emission peaks were located at -3 to -6 eV with respect to the substrate Fermi level (EF) and that photoemission peaks were located at -1 to +2 eV with respect to the substrate EF. Comparing this with the knowledge of work function and electron affinity of the sample; the mechanism of field emission has been elucidated. Namely; field emitted electrons are tunnel-emitted from states around the surface Ep and there is a large amount of resistive potential drop at the emission site. © 2007 The Japan Society of Applied Physics;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Journal article (JA)

引用

共 50 条

[1] Mechanism of field emission from a highly phosphorous-doped chemical vapor deposition diamond (111) surface
Kono, Shozo
Takyo, Go
Amano, Naoki
Plusnin, Nickolay I.
Mizuochi, Kenji
Aoyama, Tomohiro
Goto, Tadahiko
Abukawa, Tadashi
Namba, Akihiko
Tasumi, Natsuo
Nishibayashi, Yoshiki
Imai, Takahiro
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2007, 46 (1-3): : L21 - L24
[2] Elucidation of field emission characteristics of phosphorous-doped diamond films
Kuriyama, K
Kimura, C
Koizumi, S
Kamo, M
Sugino, T
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1999, 17 (02): : 723 - 727
[3] Field emission mechanism from undoped chemical vapor deposition diamond films
Göhl, A
Günther, B
Habermann, T
Müller, G
Schreck, M
Thürer, KH
Stritzker, B
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2000, 18 (02): : 1031 - 1034
[4] Field emission from chemical vapor deposition diamond surface with graphitic patches
Cui, JB
Robertson, J
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2002, 20 (01): : 238 - 242
[5] Red luminescence in phosphorous-doped chemically vapor deposited diamond
J Appl Phys, 1 (419):
[6] Red luminescence in phosphorous-doped chemically vapor deposited diamond
teNijenhuis, J
Olsthoorn, SM
vanEnckevort, WJP
Giling, LJ
JOURNAL OF APPLIED PHYSICS, 1997, 82 (01) : 419 - 422
[7] Surface Energy Band and Electron Affinity of Highly Phosphorous-doped Epitaxial CVD Diamond
Kono, S.
Mizuochi, K.
Takyo, G.
Plusnin, N. I.
Aoyama, T.
Goto, T.
Abukawa, T.
Namba, A.
Nishibayashi, Y.
Imai, T.
E-JOURNAL OF SURFACE SCIENCE AND NANOTECHNOLOGY, 2007, 5 : 33 - 40
[8] Field emission mechanism of oxidized highly phosphorus-doped homoepitaxial diamond (111)
Yamada, T
Nebel, CE
Rezek, B
Takeuchi, D
Fujimori, N
Namba, A
Nishibayashi, Y
Yamaguchi, H
Saito, I
Okano, K
APPLIED PHYSICS LETTERS, 2005, 87 (23) : 1 - 3
[9] Field emission spectroscopy from discharge activated chemical vapor deposition diamond
Gröning, O
Küttel, OM
Gröning, P
Schlapbach, L
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1999, 17 (03): : 1064 - 1071
[10] Growth mechanism of Mn-doped diamond (111) layers in microwave plasma chemical vapor deposition
Kawano, Makoto
Hirama, Kazuyuki
Taniyasu, Yoshitaka
Kumakura, Kazuhide
JOURNAL OF APPLIED PHYSICS, 2024, 135 (07)

← 1 2 3 4 5 →