Polysilicon piezoresistive pressure sensor and its temperature compensation

被引：1

作者：

Qu, HW ^{[1
]}

Yao, SY ^{[1
]}

Zhang, R ^{[1
]}

Mao, GR ^{[1
]}

Zhang, WX ^{[1
]}

机构：

[1] Tianjin Univ, Dept Microelect, Tianjin 300072, Peoples R China

来源：

1998 5TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY PROCEEDINGS | 1998年

关键词：

polysilicon sensor; temperature shift; sensibility compensation;

D O I：

10.1109/ICSICT.1998.786518

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Polysilicon sensor is one of the most prospective pressure sensor because of its good performance at relatively high temperature. In this paper wr put forward a technique to compensate its negative sensibility temperature drift that prohibits its successful utilization in wide range of temperature, The technique is inexpensive and easy to practice in applications.

引用

页码：914 / 916

页数：3

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