Control of electron temperature in SiH4/H2 plasma for obtaining high photovoltaic performance in microcrystalline silicon solar cells

被引：0

作者：

Sobajima, Y. ^{[1
]}

Muto, H. ^{[1
]}

Sada, C. ^{[1
]}

Matsuda, A. ^{[1
]}

Okamoto, H. ^{[1
]}

机构：

[1] Osaka Univ, Grad Sch Engn, Toyonaka, Osaka 5608531, Japan

来源：

11TH APCPST (ASIA PACIFIC CONFERENCE ON PLASMA SCIENCE AND TECHNOLOGY) AND 25TH SPSM (SYMPOSIUM ON PLASMA SCIENCE FOR MATERIALS) | 2013年 / 441卷

关键词：

HIGH-RATE GROWTH;

D O I：

10.1088/1742-6596/441/1/012026

中图分类号：

O35 [流体力学]; O53 [等离子体物理学];

学科分类号：

070204 ; 080103 ; 080704 ;

摘要：

We have proposed two novel processes for the formation of fine n/i interface to improve the photovoltaic performance in substrate-type (n-i-p type) hydrogenated microcrystalline-silicon (mu c-Si:H) solar cells whose i layer is deposited at high growth rate of > 2.0 nm/sec; (1) gradual monosilane-(SiH4)-molecule-introduction method and (2) amorphous silicon (a-Si:H) thin-layer-insertion method. When applying these two methods to the formation process of n/i interface in the solar cells, drastic improvement of the production reproducibility has been achieved in the fabrication process of high efficiency (> 9%) substrate-type mu c-Si:H solar cells.

引用

页数：6

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