Control of electron temperature in SiH4/H2 plasma for obtaining high photovoltaic performance in microcrystalline silicon solar cells

被引：0
|
作者：
Sobajima, Y. [1 ]
Muto, H. [1 ]
Sada, C. [1 ]
Matsuda, A. [1 ]
Okamoto, H. [1 ]
机构：
[1] Osaka Univ, Grad Sch Engn, Toyonaka, Osaka 5608531, Japan
来源：
11TH APCPST (ASIA PACIFIC CONFERENCE ON PLASMA SCIENCE AND TECHNOLOGY) AND 25TH SPSM (SYMPOSIUM ON PLASMA SCIENCE FOR MATERIALS) | 2013年 / 441卷
关键词：
HIGH-RATE GROWTH;
D O I：
10.1088/1742-6596/441/1/012026
中图分类号：
O35 [流体力学]; O53 [等离子体物理学];
学科分类号：
070204 ; 080103 ; 080704 ;
摘要：
We have proposed two novel processes for the formation of fine n/i interface to improve the photovoltaic performance in substrate-type (n-i-p type) hydrogenated microcrystalline-silicon (mu c-Si:H) solar cells whose i layer is deposited at high growth rate of > 2.0 nm/sec; (1) gradual monosilane-(SiH4)-molecule-introduction method and (2) amorphous silicon (a-Si:H) thin-layer-insertion method. When applying these two methods to the formation process of n/i interface in the solar cells, drastic improvement of the production reproducibility has been achieved in the fabrication process of high efficiency (> 9%) substrate-type mu c-Si:H solar cells.
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页数：6
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