共 50 条
- [1] Low-frequency noise characterizations on Ni/GaN Schottky diodes deposited on intermediate-temperature buffer layers 5TH INTERNATIONAL CONFERENCE ON NITRIDE SEMICONDUCTORS (ICNS-5), PROCEEDINGS, 2003, 0 (07): : 2396 - 2399
- [3] Effects of intermediate-temperature buffer layers on low-frequency noise performance of GaN based Schottky barriers PROCEEDINGS 2001 IEEE HONG KONG ELECTRON DEVICES MEETING, 2001, : 148 - 152
- [8] Effects of surface states on hydrogen sensing performance of Pt-GaN Schottky diodes PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 9, 2008, 5 (09): : 2985 - 2987
- [9] Characterization of high-quality MBE-grown GaN films on intermediate-temperature buffer layers APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2001, 72 (04): : 495 - 497
- [10] Characterization of high-quality MBE-grown GaN films on intermediate-temperature buffer layers Applied Physics A, 2001, 72 : 495 - 497