Optical band gap tuning of Sb-Se thin films for xerographic based applications

被引：21

作者：

Kaur, Ramandeep ^{[1
,2
]}

Singh, Palwinder ^{[1
,2
]}

Singh, Kulwinder ^{[3
]}

Kumar, Akshay ^{[3
]}

Thakur, Anup ^{[2
]}

机构：

[1] Punjabi Univ, Dept Phys, Patiala 147002, Punjab, India

[2] Punjabi Univ, Dept Basic & Appl Sci, Adv Mat Res Lab, Patiala 147002, Punjab, India

[3] Sri Guru Granth Sahib World Univ, Dept Nanotechnol, Adv Funct Mat Lab, Fatehgarh Sahib 140407, Punjab, India

来源：

SUPERLATTICES AND MICROSTRUCTURES | 2016年 / 98卷

关键词：

Chalcogenide; Thin film; Optical band gap; Density of states; PHASE-CHANGE; CRYSTALLIZATION KINETICS; ELECTRICAL-PROPERTIES; CHALCOGENIDE GLASSES; THERMAL-STABILITY; CONDUCTION; STATES; TE; PHOTOCONDUCTIVITY; ABSORPTION;

D O I：

10.1016/j.spmi.2016.08.023

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

In the present paper we have studied the effect of Sb addition on the optical band gap tuning of thermally evaporated SbxSe100-x (x = 0, 5, 20, 50 and 60) thin films. The structural investigations revealed that all thin films were amorphous in nature. Transmission spectrum was taken in the range 400-2500 nm shows that all films are highly transparent in the near infrared region. The fundamental absorption edge shifts towards longer wavelength with Sb incorporation. The optical band gap decreases with addition of antimony in a-Se thin films. A good correlation has been drawn between experimentally estimated and theoretically calculated optical band gap. The decrease in optical band gap of thin films has been explained using chemical bond approach and density of states model. Decrease in optical band gap with Sb addition increases the concentration of electron deep traps which increases the X-ray sensitivity of Sb-Se thin films. Thus by tuning the optical band gap of Sb-Se alloy, it could be utilized for xerographic based applications. (C) 2016 Elsevier Ltd. All rights reserved.

引用

页码：187 / 193

页数：7

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