High performance self-aligned top-gate ZnO thin film transistors using sputtered Al2O3 gate dielectric

被引：27

作者：

Chen, Rongsheng ^{[1
]}

Zhou, Wei ^{[1
]}

Zhang, Meng ^{[1
]}

Kwok, Hoi Sing ^{[1
]}

机构：

[1] Hong Kong Univ Sci & Technol, Dept Elect & Comp Engn, Ctr Display Res, Kowloon, Hong Kong, Peoples R China

来源：

THIN SOLID FILMS | 2012年 / 520卷 / 21期

关键词：

Aluminum oxide; Self-aligned structure; Thin film transistors; Zinc oxide; ZINC-OXIDE; ROOM-TEMPERATURE; ELECTRODES;

D O I：

10.1016/j.tsf.2012.06.066

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

High performance self-aligned top-gate zinc oxide (ZnO) thin film transistors (TFTs) utilizing high-k Al2O3 thin film as gate dielectric are developed in this paper. Good quality Al2O3 thin film was deposited by reactive DC magnetron sputtering technique using aluminum target in a mixed argon and oxygen ambient at room temperature. The resulting transistor exhibits a field effect mobility of 27 cm(2)/V s, a threshold voltage of -0.5 V, a subthreshold swing of 0.12 V/decade and an on/off current ratio of 9 x 10(6). The proposed top-gate ZnO TFTs in this paper can act as driving devices in the next generation flat panel displays. (C) 2012 Elsevier B.V. All rights reserved.

引用

页码：6681 / 6683

页数：3

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