Sequential Solvent Exchange Method for Controlled Exfoliation of MoS2 Suitable for Phototransistor Fabrication

被引:58
|
作者
Ghasemi, Foad [1 ]
Mohajerzadeh, Shams [1 ]
机构
[1] Univ Tehran, Sch Elect & Comp Engn, Nanoelect Lab, Tehran 1439956191, Iran
关键词
sonication assisted; exfoliation; MoS2; solvent; lateral size; phototransistor; LIQUID-PHASE EXFOLIATION; LARGE-SCALE PRODUCTION; FEW-LAYER MOS2; SINGLE-LAYER; HYDROTHERMAL SYNTHESIS; LARGE-AREA; NANOSHEETS; PHOTOLUMINESCENCE; GROWTH; INTERCALATION;
D O I
10.1021/acsami.6b07211
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
In this study, flakes of molybdenum disulfide (MoS2) with controlled size and thickness are prepared through sequential solvent exchange method by sonication in dimethylformamide (DMF) and N-methyl-2-pyrrolidone (NMP) solvents. While NMP acts more effectively in reducing the thickness of flakes, DMF shows better potential in conserving the lateral size of nanosheets. The distribution of size and thickness of nanoflakes as a function of sonication time verifies that extended sonication results in dramatic drop of the dimension of the exfoliated flakes. This technique leads to the formation of few-layered MoS2 flakes without further drop of their lateral dimensions. It has been observed that by exposing the bulk MoS2 powders to oxygen plasma, the exfoliation process is accelerated without converting to 2H-MoS2 structures. Finally, a phototransistor has been fabricated based on few layered MoS2 layers with a field effect mobility of similar to 2.1 cm(2) V-1 s(-1) showing a high response to laser excitation of 532 nm wavelength.
引用
收藏
页码:31179 / 31191
页数:13
相关论文
共 50 条
  • [21] Interface engineering of ferroelectric-gated MoS2 phototransistor
    Shuaiqin WU
    Xudong WANG
    Wei JIANG
    Luqi TU
    Yan CHEN
    Jingjing LIU
    Tie LIN
    Hong SHEN
    Jun GE
    Weida HU
    Xiangjian MENG
    Jianlu WANG
    Junhao CHU
    Science China(Information Sciences), 2021, 64 (04) : 166 - 173
  • [22] Interface engineering of ferroelectric-gated MoS2 phototransistor
    Shuaiqin Wu
    Xudong Wang
    Wei Jiang
    Luqi Tu
    Yan Chen
    Jingjing Liu
    Tie Lin
    Hong Shen
    Jun Ge
    Weida Hu
    Xiangjian Meng
    Jianlu Wang
    Junhao Chu
    Science China Information Sciences, 2021, 64
  • [23] Interface engineering of ferroelectric-gated MoS2 phototransistor
    Wu, Shuaiqin
    Wang, Xudong
    Jiang, Wei
    Tu, Luqi
    Chen, Yan
    Liu, Jingjing
    Lin, Tie
    Shen, Hong
    Ge, Jun
    Hu, Weida
    Meng, Xiangjian
    Wang, Jianlu
    Chu, Junhao
    SCIENCE CHINA-INFORMATION SCIENCES, 2021, 64 (04)
  • [24] MoS2 Phototransistor Sensitized by Colloidal Semiconductor Quantum Wells
    Sar, Huseyin
    Taghipour, Nima
    Lisheshar, Ibrahim Wonge
    Delikanli, Savas
    Demirtas, Mustafa
    Demir, Hilmi Volkan
    Ay, Feridun
    Perkgoz, Nihan Kosku
    ADVANCED OPTICAL MATERIALS, 2020, 8 (24)
  • [25] A gate-free MoS2 phototransistor assisted by ferroelectrics
    Shuaiqin Wu
    Guangjian Wu
    Xudong Wang
    Yan Chen
    Tie Lin
    Hong Shen
    Weida Hu
    Xiangjian Meng
    Jianlu Wang
    Junhao Chu
    Journal of Semiconductors, 2019, (09) : 59 - 64
  • [26] A gate-free MoS2 phototransistor assisted by ferroelectrics
    Wu, Shuaiqin
    Wu, Guangjian
    Wang, Xudong
    Chen, Yan
    Lin, Tie
    Shen, Hong
    Hu, Weida
    Meng, Xiangjian
    Wang, Jianlu
    Chu, Junhao
    JOURNAL OF SEMICONDUCTORS, 2019, 40 (09)
  • [27] A new 2-methylimidazole-assisted liquid-exfoliation method for a rapid scalable fabrication of chemically pure MoS2 nanosheets
    Sokolov, Maksim R.
    Tumbinskiy, Konstantin A.
    Zvyagina, Alexandra, I
    Senchikhin, Ivan N.
    Averin, Alexey A.
    Aleksandrov, Alexey E.
    Tameev, Alexey R.
    Ezhov, Alexander A.
    Kalinina, Maria A.
    COLLOID AND INTERFACE SCIENCE COMMUNICATIONS, 2022, 47
  • [28] MoS2 exhibits stronger toxicity with increased exfoliation
    Chng, Elaine Lay Khim
    Sofer, Zdenek
    Pumera, Martin
    NANOSCALE, 2014, 6 (23) : 14412 - 14418
  • [29] Sonochemical exfoliation and photodetection properties of MoS2 Nanosheets
    Bhakhar, Sanjay A.
    Patel, Nashreen F.
    Zankat, Chetan K.
    Tannarana, Mohit
    Solanki, G. K.
    Patel, K. D.
    Pathak, V. M.
    Pataniya, Pratik
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2019, 98 : 13 - 18
  • [30] Spontaneous exfoliation and tailoring of MoS2 in mixed solvents
    Dong, Lei
    Lin, Shan
    Yang, Liu
    Zhang, Jiajia
    Yang, Chao
    Yang, Dong
    Lu, Hongbin
    CHEMICAL COMMUNICATIONS, 2014, 50 (100) : 15936 - 15939