Resonant Optical Reflection from AsSb-AlGaAs Metamaterials and Structures

被引:0
|
作者
Ushanov, V. I. [1 ]
Chaldyshev, V. V. [1 ]
Preobrazhenskiy, V. V. [2 ]
Putyato, M. A. [2 ]
Semyagin, B. R. [2 ]
机构
[1] Ioffe Inst, St Petersburg, Russia
[2] Rzhanov Inst Semicond Phys, Novosibirsk, Russia
基金
俄罗斯基础研究基金会;
关键词
METAL NANOINCLUSIONS; SYSTEM; GAAS;
D O I
10.1134/S1063782618040292
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
The optical reflection in periodic structures based on a semiconductor AlGaAs matrix containing two-dimensional arrays of plasmonic AsSb nanoinclusions was studied. The number of periods was 12 or 24. The spatial period was near 110 nm in both cases. In the experimental optical reflection spectra at normal incidence we observed resonant Bragg diffraction with the main peaks at wavelengths of 757 or 775 nm, depending on the spatial period of the nanostructure. The magnitudes of the resonance peaks reached 19 and 31% for the systems of 12 and 24 AsSb-AlGaAs layers, while the volume fraction of the nanoinclusions was much less than 1%. In the case of light incident at inclined angles, the Bragg-diffraction pattern shifted according to Wulff-Bragg's law. Numerical calculations of the optical reflection spectra were performed using the transfer-matrix method by taking into account the spatial geometry of the structures and the resonance characteristics of the plasmonic AsSb layers.
引用
收藏
页码:468 / 472
页数:5
相关论文
共 50 条
  • [21] Optical polarization spectroscopy on quantum confined stark effect in resonant-cavity AlGaAs/GaAs MQW structures
    Rheinlander, B
    Borgulova, J
    Kovac, J
    Gottschalch, V
    Waclawek, J
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1997, 164 (01): : 95 - 99
  • [22] REFLECTION PROPERTIES AND APPLICATIONS OF RESONANT OPTICAL CAVITIES
    CHANDRA, S
    OPTICS LETTERS, 1982, 7 (11) : 532 - 534
  • [23] Influence of structures on optical modulation in terahertz metamaterials
    Li C.
    Yang Z.
    Zhou Q.
    Wu A.
    Zhang C.
    Zhou, Qingli (qlzhou@cnu.edu.cn), 1600, Chinese Society of Astronautics (45):
  • [24] RESONANT LEVEL LIFETIME IN GAAS/ALGAAS DOUBLE-BARRIER STRUCTURES
    BAHDER, TB
    MORRISON, CA
    BRUNO, JD
    APPLIED PHYSICS LETTERS, 1987, 51 (14) : 1089 - 1090
  • [25] Resonant magnetopolaron effects in GaAs/AlGaAs multiple quantum well structures
    Wang, YJ
    Nickel, HA
    McCombe, BD
    Peeters, FM
    Shi, JM
    Hai, GQ
    Wu, XG
    Eustis, TJ
    Schaff, W
    PHYSICA E, 1998, 2 (1-4): : 161 - 165
  • [26] CHARACTERIZATION OF MOVPE-GROWN ALGAAS/GAAS RESONANT TUNNELING STRUCTURES
    SCHNELL, RD
    TEWS, H
    NEUMANN, R
    MITWALSKY, A
    TREICHLER, R
    PACKEISER, G
    INSTITUTE OF PHYSICS CONFERENCE SERIES, 1990, (106): : 825 - 830
  • [27] RESONANT TUNNELING OF HOLES IN SINGLE AND DOUBLE BARRIER GAAS/ALGAAS STRUCTURES
    ROUSSEAU, KV
    WANG, KL
    SCHULMAN, JN
    SUPERLATTICES AND MICROSTRUCTURES, 1989, 6 (01) : 67 - 72
  • [28] Characterisation of MOVPE-grown AlGaAs/GaAs resonant tunneling structures
    1600, (Publ by Inst of Physics Publ Ltd, Bristol, Engl):
  • [29] Extraordinary Reflection from Photonic Crystal with Metamaterials
    Shmat'ko, A. A.
    Kazanko, A. B.
    Mizernik, V. N.
    Odarenko, E. N.
    Yampol'skii, V. A.
    Rokhmanova, T. N.
    Mizernik, V. N.
    Odarenko, E. N.
    Yampol'skii, V. A.
    Rokhmanova, T. N.
    2016 8TH INTERNATIONAL CONFERENCE ON ULTRAWIDEBAND AND ULTRASHORT IMPULSE SIGNALS (UWBUSIS), 2016, : 160 - 162