Accurate analysis of millimeter-wave MMIC power amplifier using distributed FET model

被引：0

作者：

Kuwabara, T ^{[1
]}

Kosaka, Y ^{[1
]}

Eda, T ^{[1
]}

Saryo, T ^{[1
]}

Akiba, Y ^{[1
]}

Funabashi, M ^{[1
]}

机构：

[1] NEC Corp Ltd, C&C LSI Dev Div, Nakahara Ku, Kawasaki, Kanagawa 211, Japan

来源：

1999 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-4 | 1999年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper reports analysis of the distributed FET model. The distributed FET model was effective to construct the equivalent circuit of FETs that have large and complex layout. To confirm advantage of the distributed FET model, a Ka-band power MMIC amplifier was designed. The results of the fabricated MMIC were good agreement with simulation.

引用

页码：161 / 164

页数：4

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