Study of thermal effects and self-heating phenomena in planar power SOI MOS transistors

被引：1

作者：

Chaplygin, Yu. A. ^{[1
]}

Artamonova, E. A. ^{[1
]}

Krasyukov, A. Yu. ^{[1
]}

Krupkina, T. Yu. ^{[1
]}

机构：

[1] State Inst Elect Engn, Zelenograd 103498, Moscow Oblast, Russia

来源：

SEMICONDUCTORS | 2008年 / 42卷 / 13期

关键词：

D O I：

10.1134/S1063782608130150

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Heat removal problems, thermal effects, and self-heating phenomena occurring during operation of planar power SOI MOS transistors are considered. Using device-technological simulating methods, the transistor characteristics and safe operation range were studied. It was shown that limitations of the safe operation range are mostly associated with structure self-heating rather than with the parasitic bipolar transistor.

引用

页码：1522 / 1526

页数：5

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