Electrical properties of TiO2 thin films

被引：117

作者：

Yildiz, A. ^{[1
]}

Lisesivdin, S. B. ^{[2
]}

Kasap, M. ^{[2
]}

Mardare, D. ^{[3
]}

机构：

[1] Ahi Evran Univ, Fac Sci & Arts, Dept Phys, TR-40040 Asikpasa Kampusu, Kirsehir, Turkey

[2] Gazi Univ, Fac Sci & Arts, Dept Phys, TR-06500 Ankara, Turkey

[3] Alexandru Ioan Cuza Univ, Fac Phys, Iasi 700506, Romania

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 2008年 / 354卷 / 45-46期

关键词：

Conductivity; Variable-range hopping (VRH); TiO(2);

D O I：

10.1016/j.jnoncrysol.2008.07.009

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The electrical properties of n-type titanium dioxide thin films deposited by magnetron-sputtering method have been investigated by temperature-dependent conductivity. We observed that the temperature dependence of the electrical conductivity of titanium dioxide films exhibits a crossover from T(-1/4) to T(-1/2) dependence in the temperature range between 80 and 110 K. Characteristic parameters describing conductivity, such as the characteristic temperature (T(0)). hopping distance (R(hop)), average hopping energy (Delta(hop)), Coulomb gap (Delta(C)), localization length (xi) and density of states (N(E(F))), were determined, and their values were discussed within the models describing conductivity in TiO(2) thin films. (C) 2008 Elsevier B.V. All rights reserved.

引用

页码：4944 / 4947

页数：4

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