Nanofabrication of grid-patterned substrate by holographic lithography

被引：5
|
作者：
Huang, CJ
Zhu, XP
Li, C
Zuo, YH
Cheng, BW
Li, DZ
Luo, LP
Yu, JZ
Wang, QM
机构：
[1] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China
[2] Chinese Acad Sci, Inst Semicond, Natl Engn Res Ctr Optoelect Devices, Beijing 100083, Peoples R China
来源：
JOURNAL OF CRYSTAL GROWTH | 2002年 / 236卷 / 1-3期
基金：
中国国家自然科学基金;
关键词：
etching; nanostructures; substrates;
D O I：
10.1016/S0022-0248(01)02388-0
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
The two-dimensional grid patterns on Si(001) in nanometer scale have been fabricated by holographic lithography and reactive ion etching, which can be used as a substrate for positioning Ge islands during self-assembled epitaxy to obtain an ordered Ge quantum dots matrix. By changing the configuration of the holographic lithography and the etching rate and time, we can control the grid period, the shape of the pattern cell, and the orientation of those shapes, respectively. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：141 / 144
页数：4
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