Electrophosphorescent organic light-emitting diodes with modified hole blocking layer

被引:0
|
作者
Shin, Y. C. [1 ]
Baek, H. I. [1 ]
Lee, C. H. [1 ]
机构
[1] Seoul Natl Univ, Sch Elect Engn & Comp Sci, Seoul 151744, South Korea
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中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The electrical and optical properties of electrophosphorescent organic light-emitting diodes (OLEDs) with modified hole blocking layer (HBL) were investigated. Well-known 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP) HBL is mixed with electrophosphorescent host material (4,4'-N,N'-dicarbazole-biphenyl: CBP) or electrophosphorescent dopant material (fac-tris(2-phenylpyridine) iridium: Ir(ppy)(3)) or both. The highest external quantum efficiency was obtained in the device with BCP-CBP-Ir(ppy)(3) mixed HBL and we attribute this result to the additional charge recombination in mixed-HBL.
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页码:1042 / 1045
页数:4
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