Impact of γ Radiation on Charge Trapping Properties of Nanolaminated HfO2/Al2O3 ALD Stacks

被引：0
|
作者：
Spassov, D. [1 ]
Paskaleva, A. [1 ]
Davidovic, V. [2 ]
Djoric-Vehkovic, S. [2 ]
Stankovic, S. [4 ]
Stojadinovic, N. [3 ]
Ivanov, Tz [1 ]
Stanchev, T. [1 ]
机构：
[1] Bulgarian Acad Sci, Inst Solid State Phys, Tzarigradsko Chaussee 72, Sofia 1734, Bulgaria
[2] Univ Nis, Fac Elect Engn, Aleksandra Medvedeva 14, Nish 18000, Serbia
[3] Serbian Acad Sci & Arts SASA, Knez Mihailova 35, Belgrade 11000, Serbia
[4] Univ Belgrade, Inst Nucl Sci Vinca, Mike Petrovica 12-14, Belgrade, Serbia
来源：
2019 IEEE 31ST INTERNATIONAL CONFERENCE ON MICROELECTRONICS (MIEL 2019) | 2019年
关键词：
ELECTRICAL CHARACTERISTICS; IRRADIATION; HFO2;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The effect of gamma radiation on the charge trapping and oxide properties of MIS capacitors with nanolaminated HfO2/Al2O3 dielectrics are presented. The irradiation with dose of 1 and 10 Mrad generates electron traps thereby substantially enhancing the memory windows of stacks. gamma radiation increases the positive oxide charge of the structures, but the effect depends also on the thermal treatment of the stacks. The used doses do not deteriorate the density of interface states, leakage currents and retention characteristics.
引用
收藏
页码：59 / 62
页数：4
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