Low-Temperature All-Solution-Derived Amorphous Oxide Thin-Film Transistors

We prepared thin-film transistors (TFTs) in which all the layers were fabricated using simple chemical solution-processed, vacuum-free routes, followed by thermal annealing at 400 degrees C. A ruthenium oxide film prepared via low-temperature processing was used for both gate and source/drain electrodes. Amorphous lanthanum-zirconium oxide and zirconium-indium-zinc oxide films were used as the gate insulator and channel layer, respectively, which enabled the fabrication of a TFT with the desired performance at a sufficiently low temperature. The ultraviolet-ozone treatment was adopted to channel layer to facilitate precursor decomposition and condensation processes. As a result, the obtained ON/OFF ratio, subthreshold swing voltage, and channel mobility were similar to 6 x 10(5), 250 mV/decade, and 5.80 cm(2)V(-1) s(-1), respectively. This result contributes to the development of sustainable completely printed inorganic electronics.