Induced lattice defects in InGaAsP laser diodes by high-temperature gamma ray irradiation

Results of a study are presented on the degradation of InGaAsP laser diodes by high-temperature gamma-ray and electron irradiation. It is shown that the optical power decreases after irradiation. One hole trap is observed in the In0.76Ga0.24As0.55P0.45 multi-quantum well active region after room-temperature gamma- or e(-)-irradiation. The deep levels are thought to be associated with the Ga-vacancy. The decrease of the optical power is ascribed to the carrier removal and to the mobility reduction by carrier scattering, through the induced lattice defects. The change of device performance and the introduction rate of lattice defects decrease with increasing irradiation temperature, The optical power after a 200degreesC irradiation is nearly identical as before, for the fluence range studied. (C) 2001 Elsevier Science B.V. All rights reserved.