First demonstration of low-power monolithic transimpedance amplifier using InP/GaAsSb/InP DHBTs

被引：0
|
作者：
Zhu, X [1 ]
Wang, J [1 ]
Pavlidis, D [1 ]
Hsu, SH [1 ]
机构：
[1] Univ Michigan, Dept Elect Engn & Comp Sci, Ann Arbor, MI 48109 USA
来源：
2005 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM, VOLS 1-4 | 2005年
关键词：
heterojunction bipolar transistors; microwave amplifiers; MMICs;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A low-power transimpeclance amplifier is presented based on novel InP/GaAsSb/InP DHBT technology. This is the first monolithic circuit demonstration using Sb-based InP DHBTs. Self-biased from a single 2.55 V dc supply, the broadband transimpedance amplifier in shunt-shunt feedback exhibited a 6.0 dB gain, 8.0 GHz bandwidth, 43 dB Omega transimpeclance, and a corresponding gain-bandwidth of 1.13 THz-Omega while consuming only 15.3 mW dc power. The single-stage buffer amplifier achieved a good Gain-Bandwidth-Product per dc power figure-of-merit (GBP/P-dc) of 1.05 GHz/mW.
引用
收藏
页码：101 / 103
页数：3
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