PHOTO-THERMAL MODIFICATIONS IN ULTRAFAST LASER INSCRIBED CHALCOGENIDE GLASS WAVEGUIDES

被引:1
|
作者
Sivakumar, Gayathri [1 ]
Sabapathy, Tamilarasan [1 ]
Ayiriveetil, Arunbabu [1 ]
Kar, Ajoy K. [1 ]
Asokan, Sundarrajan [1 ]
机构
[1] Indian Inst Sci, Dept Instrumentat & Appl Phys, Bangalore 560012, Karnataka, India
关键词
chalcogenide; ultrafast laser; waveguide; heat accumulation; thermal diffusion model; HEAT ACCUMULATION; FABRICATION; PHOTOLUMINESCENCE;
D O I
10.1117/12.2018943
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
We report here, a finite difference thermal diffusion (FDTD) model for controlling the cross-section and the guiding nature of the buried channel waveguides fabricated on GeGaS bulk glasses using the direct laser writing technique. Optimization of the laser parameters for guiding at wavelength 1550 nm is done experimentally and compared with the theoretical values estimated by FDTD model. The mode field diameter (MFD) between 5.294 mu m and 24.706 mu m were attained by suitable selection of writing speed (1mm/s to 4 mm/s) and pulse energy (623 nJ to 806 nJ) of the laser at a fixed repletion rate of 100 kHz. Transition from single-mode to multi-mode waveguide is observed at pulse energy 806nJ as a consequence of heat accumulation. The thermal diffusion model fits well for single-mode waveguides with the exception of multi-mode waveguides.
引用
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页数:5
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