Three-Dimensional Integration Technology of Separate SOI Layers for Photodetectors and Signal Processors of CMOS Image Sensors

被引：0

作者：

Goto, Masahide ^{[1
]}

Hagiwara, Kei ^{[1
]}

Honda, Yuki ^{[1
]}

Nanba, Masakazu ^{[1
]}

Iguchi, Yoshinori ^{[1
]}

Saraya, Takuya ^{[2
]}

Kobayashi, Masaharu ^{[2
]}

Higurashi, Eiji ^{[2
]}

Toshiyoshi, Hiroshi ^{[2
]}

Hiramoto, Toshiro ^{[2
]}

机构：

[1] NHK Sci & Technol Res Labs, Setagaya Ku, 1-10-11 Kinuta, Tokyo 1578510, Japan

[2] Univ Tokyo, Tokyo, Japan

来源：

2016 INTERNATIONAL CONFERENCE ON ELECTRONICS PACKAGING (ICEP) | 2016年

关键词：

CMOS image sensors; three-dimensional (3-D) integration technology; silicon-on-insulator (SOI);

D O I：

暂无

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

We report on three-dimensional (3-D) integration technology of separate silicon-on-insulator (SOI) layers for photodetectors and signal processors of CMOS image sensors. Photodiode, A/D convertor, and counter were integrated in two SOI layers that were vertically connected by embedded Au electrodes, thereby enabling pixel-parallel operation of image sensor. Photodiode has a P+/N/P-structure to suppress the dark current. We developed the image sensor and confirmed its performance of a wide dynamic range of 96 dB and high resolution of 16 bit. The sensor is promising to next-generation ultimate imaging devices.

引用

页码：70 / 73

页数：4

共 50 条

[1] Three-Dimensional Integrated Circuits and Stacked CMOS Image Sensors using Direct Bonding of SOI Layers
Goto, Masahide
Hagiwara, Kei
Iguchi, Yoshinori
Ohtake, Hiroshi
Saraya, Takuya
Kobayashi, Masaharu
Higurashi, Eiji
Toshiyoshi, Hiroshi
Hiramoto, Toshiro
[J]. 2015 INTERNATIONAL 3D SYSTEMS INTEGRATION CONFERENCE (3DIC 2015), 2015,
[2] Three-Dimensional Integrated CMOS Image Sensors with Pixel-Parallel A/D Converters Fabricated by Direct Bonding of SOI Layers
Goto, Masahide
Hagiwara, Kei
Iguchi, Yoshinori
Ohtake, Hiroshi
Saraya, Takuya
Kobayashi, Masaharu
Higurashi, Eiji
Toshiyoshi, Hiroshi
Hiramoto, Toshiro
[J]. 2014 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), 2014,
[3] Vertically-integrated three-dimensional SOI photodetectors
Culurciello, Eugenio
Weerakoon, Pujitha
[J]. 2007 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS, VOLS 1-11, 2007, : 2498 - 2501
[4] Three-dimensional self-assembled sensors in thin-film SOI technology
Iker, Francois
Andre, Nicolas
Pardoen, Thomas
Raskin, Jean-Pierre
[J]. JOURNAL OF MICROELECTROMECHANICAL SYSTEMS, 2006, 15 (06) : 1687 - 1697
[5] Interconnection technology for three-dimensional integration
[J]. Mitsuhashi, Katsunori, 1600, (28):
[6] Interconnection technology for three-dimensional integration
Mitsuhashi, Katsunori
Yamazaki, Osamu
Inoue, Atsuhisa
Shimizu, Shin
Ohtake, Koui
Koba, Masayoshi
[J]. Shapu Giho/Sharp Technical Journal, 1989, (42): : 37 - 44
[7] Data registration and integration of three-dimensional sensors
Ge, BZ
Sun, YC
Lv, QN
Zhang, YM
[J]. OPTICAL ENGINEERING, 2005, 44 (05) : 1 - 6
[8] Three-dimensional CMOL: three-dimensional integration of CMOS/nanomaterial hybrid digital circuits
Tu, D.
Liu, M.
Wang, W.
Haruehanroengra, S.
[J]. MICRO & NANO LETTERS, 2007, 2 (02) : 40 - 45
[9] Three-dimensional integration: Technology, use, and issues for mixed-signal applications
Xue, L
Liu, CC
Kim, HS
Kim, S
Tiwari, S
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2003, 50 (03) : 601 - 609
[10] Integral Three-dimensional Image Technology
Sasaki H.
[J]. Kyokai Joho Imeji Zasshi/Journal of the Institute of Image Information and Television Engineers, 2019, 73 (05): : 839 - 843

← 1 2 3 4 5 →