Fluctuation and anisotropy in the resistivity of Bi2Sr2CaCu2O8+x single crystal

被引：0
|
作者：
Fastampa, R
Giura, M
Sarti, S
Marcon, R
Neri, D
Silva, E
Boffa, V
机构：
[1] Univ Roma La Sapienza, Dipartimento Fis, I-00185 Rome, Italy
[2] Unita INFM, I-00185 Rome, Italy
[3] Univ Roma Tre, Dipartimento Fis E Amaldi, I-00146 Rome, Italy
[4] Univ Roma Tre, Unita INFM, I-00146 Rome, Italy
[5] ENEA, CRE Frascati, I-00044 Frascati, Italy
[6] Univ Roma La Sapienza, Dipartimento Ingn Elettron, I-00185 Rome, Italy
来源：
INTERNATIONAL JOURNAL OF MODERN PHYSICS B | 1999年 / 13卷 / 9-10期
关键词：
D O I：
10.1142/S0217979299001077
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report a study of the resistive transitions in Bi2Sr2CaCu2O8+x in presence of an applied magnetic field (up to 12 tesla) at various field orientations. We focus our attention on the results obtained with orientations parallel and perpendicular to the (a,b) planes. We show that scaling arguments, typical of dissipative regimes independent of oriented defects, can explain the experimental findings, provided a 3D-2D crossover is assumed as the temperature is lowered, due to the variation of the out of plane coherence length.
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页码：1131 / 1136
页数：6
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