SiC sublimation growth at small spacing between source and seed

被引：1

作者：

Mokhov, E. N. ^{[1
]}

Roenkov, A. D. ^{[1
,2
]}

Segal, A. S. ^{[3
]}

机构：

[1] Russian Acad Sci, AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

[2] Nitride Crystals Ltd, St Petersburg 194156, Russia

[3] Soft Impact Ltd, St Petersburg 194156, Russia

来源：

SILICON CARBIDE AND RELATED MATERIALS 2012 | 2013年 / 740-742卷

关键词：

SiC; sublimation sandwich method; small spacing; growth kinetics; Al; Ga; LAYERS;

D O I：

10.4028/www.scientific.net/MSF.740-742.69

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The growth kinetics of SiC crystals doped with Al and Ga impurities and grown by the sublimation sandwich method at a small spacing between the source and the seed (<1 mm) has been studied. Dependence of an Al-doped SiC crystals growth rate on the clearance is shown to be non-monotonic and exhibits maximum at the clearance about of 100-300 m. Such dependence is also observed for growth of pure and Ga-doped SiC crystals but only on (0001)Si face. The derived dependencies suggest that there are some considerable kinetic limitations of the SiC growth rate. High quality SiC crystals with such high concentration of the Al impurity as 2x10(21) cm(-3) were grown.

引用

页码：69 / +

页数：2

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