Influence of the laser fluence on the electrical properties of pulsed-laser-deposited SrBi2Ta2O9 thin films

被引：33
|
作者：
Bu, SD [1 ]
Park, BH
Kang, BS
Kang, SH
Noh, TW
Jo, W
机构：
[1] Seoul Natl Univ, Dept Phys, Seoul 151742, South Korea
[2] Seoul Natl Univ, Condensed Matter Res Inst, Seoul 151742, South Korea
[3] LG Corp Inst Technol, Seoul 137140, South Korea
来源：
APPLIED PHYSICS LETTERS | 1999年 / 75卷 / 08期
关键词：
D O I：
10.1063/1.124627
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Polycrystalline SrBi2Ta2O9 ferroelectric thin films were grown on Pt/Ti/SiO2/Si substrates using pulsed-laser deposition. By adjusting the laser fluence, we could successfully control remnant polarization of the films. In a narrow fluence range of 1.0-1.5 J/cm(2), films with large remnant polarizations (as high as 18.7 mu C/cm(2)) could be obtained. The choice of an optimal laser fluence was found to be very important to control electrical properties of the films. From electron-probe microanalysis, it was demonstrated that the Bi content is closely related with the remnant polarization. (C) 1999 American Institute of Physics. [S0003-6951(99)03234-9].
引用
收藏
页码：1155 / 1157
页数：3
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