Spin injection into a metal from a topological insulator

被引:25
|
作者
Modak, S. [1 ]
Sengupta, K. [1 ]
Sen, Diptiman [2 ]
机构
[1] Indian Assoc Cultivat Sci, Dept Theoret Phys, Kolkata 700032, India
[2] Indian Inst Sci, Ctr High Energy Phys, Bangalore 560012, Karnataka, India
关键词
D O I
10.1103/PhysRevB.86.205114
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We study a junction of a topological insulator with a thin two-dimensional nonmagnetic or partially polarized ferromagnetic metallic film deposited on a three-dimensional insulator. We show, by deriving generic boundary conditions applicable to electrons traversing the junction, that there is a finite spin-current injection into the film whose magnitude can be controlled by tuning a voltage V applied across the junction. For ferromagnetic films, the direction of the component of the spin current along the film magnetization can also be tuned by tuning the barrier potential V-0 at the junction. We point out the role of the chiral spin-momentum locking of the Dirac electrons behind this phenomenon and suggest experiments to test our theory.
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页数:6
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