Kondo effect of an antidot in the integer quantum Hall regime: a microscopic calculation

被引：4
|
作者：
Sim, HS
Hwang, NY
Kataoka, M
Yi, HM
Choi, MS
Yang, SRE
机构：
[1] Korea Inst Adv Study, Sch Phys, Seoul 130722, South Korea
[2] Korea Univ, Dept Phys, Seoul 136701, South Korea
[3] Cavendish Lab, Cambridge CB3 OHE, England
来源：
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2004年 / 22卷 / 1-3期
关键词：
antidot; quantum Hall effect; Kondo effect;
D O I：
10.1016/j.physe.2003.12.068
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
An electron antidot system is an open geometry problem and often requires heavy calculations to compute its physical properties. Such a difficulty can be avoided by transforming an electron antidot system to a system of hole quantum dot since the transformed system contains only a finite number of confined holes. Using this transformation, we present a microscopic approach to study electronic properties of an antidot in the integer quantum Hall regime. Based on this approach we discuss various conditions under which the Kondo effect may be present. (C) 2003 Elsevier B.V. All rights reserved.
引用
收藏
页码：554 / 557
页数：4
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