UV surface exposure for low temperature hydrophilic silicon direct bonding

被引:16
|
作者
Lin, Xiaohui [2 ]
Liao, Guanglan [1 ,2 ]
Tang, Zirong [3 ]
Shi, Tielin [3 ]
机构
[1] Div Optoelect Mat & Micronano Manufacture, Wuhan, Peoples R China
[2] Huazhong Univ Sci & Technol, State Key Lab Digital Mfg Equipment & Technol, Wuhan 430074, Peoples R China
[3] Wuhan Natl Lab Optoelect, Wuhan 430074, Peoples R China
基金
中国国家自然科学基金;
关键词
ROOM-TEMPERATURE; WAFERS; PLASMA;
D O I
10.1007/s00542-008-0703-3
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The ultraviolet (UV) surface exposure is applied in hydrophilic silicon direct bonding as an additional treatment following the traditional wet chemical activation processes. Infrared inspection and tensile strength test are then performed. It is found that improvement in bond-rate, interface uniformity as well as high tensile strength is obtained. The mechanism of UV exposure including surface cleaning and surface modification is discussed in detail. Mixed spectrum emitted from the UV source comprising 254 and 185 nm wavelength efficiently removes the resided organic contaminations on silicon surface by photosensitization and oxidation effects. Besides, considerable hydroxyl incorporations are generated by UV reacting with surface water molecular and silicon dioxide. Thus, appropriate UV exposure will render the silicon surface more hydrophilic and improve bondability. It is concluded that as an additional cleaning and modification treatment, UV exposure is effective and promising to enhanced bond quality in low temperature hydrophilic silicon direct bonding.
引用
收藏
页码:317 / 321
页数:5
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