Non-substituted fused bis-tetracene based thin-film transistor with self-assembled monolayer hybrid dielectrics

被引：0
|
作者：
Zhao, Baolin [1 ]
Feofanov, Mikhail [2 ]
Lungerich, Dominik [2 ,3 ]
Park, Hyoungwon [1 ]
Rejek, Tobias [1 ]
Wittmann, Judith [1 ]
Sarcletti, Marco [1 ]
Amsharov, Konstantin [2 ]
Halik, Marcus [1 ]
机构：
[1] Friedrich Alexander Univ Erlangen Nurnberg, Dept Mat Sci, Inst Polymer Mat, Organ Mat & Devices, IZNF Bldg,Cauerstr 9, D-91058 Erlangen, Germany
[2] Friedrich Alexander Univ Erlangen Nurnberg, Chair Organ Chem 2, Nikolaus Fiebiger Str 10, D-91058 Erlangen, Germany
[3] Univ Tokyo, Mol Technol Innovat Presidential Endowed Chair, 7-3-1 Hongo, Tokyo 1130033, Japan
来源：
FRONTIERS OF MATERIALS SCIENCE | 2020年 / 14卷 / 03期
基金：
日本学术振兴会;
关键词：
fused bis-tetracene; organic field-effect transistor; contact resistance; self-assembled monolayer; ORGANIC SEMICONDUCTOR; CHARGE-TRANSPORT; PERFORMANCE; BISTETRACENE; PENTACENE; MOBILITY; PACKING; GROWTH; MORPHOLOGY; STABILITY;
D O I：
10.1007/s11706-020-0518-4
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Polycyclic aromatic hydrocarbons with zigzag peripheries are high perspective candidates for organic electronics. However, large fused acenes are still poorly studied due to the tedious synthesis. Herein we report a non-substituted fused bistetracene DBATT (2.3,8.9-dibenzanthanthrene) as the semiconductor on low-voltage-driven organic thin-film transistors. The systematic studies of thin-film growth on various self-assembled monolayer (SAM) modified gate dielectrics and the electrical performances were carried out. The sub-monolayer of the semiconductor film shows larger island domains on the alkyl chain SAM. This device exhibits the hole mobility of 0.011 cm(2)center dot V-1 center dot s(-1)with a current ratio ofI(on)II(off)above 10(5).
引用
收藏
页码：314 / 322
页数：9
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