FeSi diffusion barriers in Fe/FeSi/Si/FeSi/Fe multilayers and oscillatory antiferromagnetic exchange coupling

被引:10
|
作者
Stromberg, F. [1 ]
Bedanta, S. [1 ]
Antoniak, C. [1 ]
Keune, W. [1 ,2 ]
Wende, H. [1 ,3 ]
机构
[1] Univ Duisburg Essen, Fachbereich Phys, D-47048 Duisburg, Germany
[2] Max Planck Inst Mikrostrukturphys, D-06120 Halle, Germany
[3] Univ Duisburg Essen, Ctr Nanointegrat CeNIDE, D-47048 Duisburg, Germany
关键词
D O I
10.1088/0953-8984/20/42/425205
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
We study the diffusion of (57)Fe probe atoms in Fe/FeSi/Si/FeSi/Fe multilayers on Si(111) prepared by molecular beam epitaxy by means of (57)Fe conversion electron Mossbauer spectroscopy (CEMS). We demonstrate that the application of FeSi boundary layers successfully inhibits the diffusion of (57)Fe into the Si layer. The critical thickness for the complete prevention of Fe diffusion takes place at a nominal FeSi thickness of t(FeSi) = 10-12 angstrom, which was confirmed by the evolution of the isomer shift delta of the crucial CEM subspectrum. The formation of the slightly defective c-FeSi phase for thicker FeSi boundary layers (similar to 20 angstrom) was confirmed by CEMS and reflection high-energy electron diffraction (RHEED). Ferromagnetic resonance (FMR) shows that, for t(FeSi) = 0-14 angstrom, the Fe layers in all samples are antiferromagnetically coupled and we observe an oscillatory antiferromagnetic coupling strength with FMR and superconducting quantum interference device (SQUID) magnetometry for varying FeSi thickness with a period of similar to 6 angstrom.
引用
收藏
页数:8
相关论文
共 50 条
  • [31] FORMATION OF BETA-FESI2 FROM THE SINTERED EUTECTIC ALLOY FESI-FE2SI5 DOPED WITH COBALT
    KOJIMA, T
    MASUMOTO, K
    OKAMOTO, MA
    NISHIDA, I
    JOURNAL OF THE LESS-COMMON METALS, 1990, 159 (1-2): : 299 - 305
  • [32] STUDY OF THE EPITAXY OF BETA-FESI2 BY CODEPOSITION OF FE AND SI ON SI(111)
    WALLART, X
    NYS, JP
    DEHAESE, O
    VINCENT, G
    APPLIED SURFACE SCIENCE, 1993, 70-1 : 598 - 602
  • [33] Enhanced interlayer coupling and magnetoresistance ratio in Fe3Si/FeSi2 superlattices
    Takeda, Kaoru
    Yoshitake, Tsuyoshi
    Sakamoto, Yoshiki
    Ogawa, Tetsuya
    Hara, Daisuke
    Itakura, Masaru
    Kuwano, Noriyuki
    Kajiwara, Toshinori
    Nagayama, Kunihito
    APPLIED PHYSICS EXPRESS, 2008, 1 (02)
  • [34] Enhanced interlafer coupling and magnetoresistance ratio in Fe 3Si/FeSi2 superlattlces
    Department of Applied Science for Electronics and Materials, Kyushu University, 6-1 Kasuga, Fukuoka 816-8580, Japan
    不详
    不详
    Appl. Phys. Express, 1882, 2
  • [35] Control of the conduction type of nondoped high mobility β-FeSi2 films grown from Si/Fe multilayers by change of Si/Fe ratios
    Takakura, K
    Suemasu, T
    Ikura, Y
    Hasegawa, F
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2000, 39 (8A): : L789 - L791
  • [36] Formation of β-FeSi2 film by deposition Fe on Si(111) substrate
    Li, Qiang
    Wang, Hai-Yan
    Gongneng Cailiao/Journal of Functional Materials, 2006, 37 (11): : 1762 - 1764
  • [37] Oscillatory exchange coupling in Fe/Cr multilayers
    Stiles, MD
    PHYSICAL REVIEW B, 1996, 54 (20): : 14679 - 14685
  • [38] SOFT-X-RAY-EMISSION STUDIES OF BULK FE3SI, FESI, AND FESI2, AND IMPLANTED IRON SILICIDES
    JIA, JJ
    CALLCOTT, TA
    OBRIEN, WL
    DONG, QY
    MUELLER, DR
    EDERER, DL
    TAN, Z
    BUDNICK, JI
    PHYSICAL REVIEW B, 1992, 46 (15): : 9446 - 9451
  • [39] The electronic configuration of Fe in beta-FeSi2
    Fanciulli, M
    Rosenblad, C
    Weyer, G
    Svane, A
    Christensen, NE
    vonKanel, H
    Rodriguez, CO
    JOURNAL OF PHYSICS-CONDENSED MATTER, 1997, 9 (07) : 1619 - 1630
  • [40] Hole mobility of p-type ß-FeSi2 thin films grown from Si/Fe multilayers
    Takakura, K.
    Ohyama, H.
    Takarabe, K.
    Suemasu, T.
    Hasegawa, F.
    Journal of Applied Physics, 2005, 97 (09):