The peculiarities of optical bistability realization inthe exciton absorption region of layer semiconductors

The influence of the exciton and phonon spectra of layer semiconductors on the conditions of optical bistability (OB) realization in the exciton absorption region is investigated by means of the Green function method. Using, the 2H-polytype Pbl(2), as an example, it has been found that an effective exciton scattering by an oscillation of the bending wave (BW) type leads to the short wave shift of the OB realization region, the decrease of its size, the widening of the OB observing temperature region and to the shift of the hysteresis loop in the direction of greater intensities, the decrease of its height and width. The possibility of observing the polarizable OB, connected with the direction of spreading and the insident light polarization dependence of the layer crystal exciton spectra is substantiated in this paper.