Dynamical modeling of transport in MOS structures containing silicon nanocrystals for memory applications

被引：2
|
作者：
Carreras, Josep [1 ]
Jambois, O. [1 ]
Peralvarez, M. [1 ]
Lebour, Y. [1 ]
Garrido, B. [1 ]
机构：
[1] Univ Barcelona, Dept Elect, IN2UB EME, E-08028 Barcelona, Spain
来源：
MICROELECTRONIC ENGINEERING | 2008年 / 85卷 / 12期
关键词：
Silicon; Nanocrystals; Silicon nanocrystals; Transport modeling; Flash memories; Nonvolatile memories;
D O I：
10.1016/j.mee.2008.09.034
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A compact model that can be used to reproduce both quasi-static and dynamic characteristics of basic MOS cells with embedded Si-nc is presented. The structure is modeled through a device-like complex matrix of tunnel junctions, resulting in a time-dependent non-linear system of differential equations that is numerically solved, including calculation of the capacitance matrix, analytical tunneling expressions (direct and Fowler-Nordheim) for electrons/holes, and derivation of the effective tunneling area. The threshold evolution is calculated by monitoring the charge at each Si-nc as a function of time. The model is successfully validated against experimental data, showing its applicability to predict program/erase characteristics of nanocrystal memories its well as threshold voltage bit-to-bit dispersion as a consequence of geometrical non-uniformities in the nanocrystal layer position and/or gate areal coverage. (C) 2008 Elsevier B.V. All rights reserved.
引用
收藏
页码：2378 / 2381
页数：4
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