Dynamical modeling of transport in MOS structures containing silicon nanocrystals for memory applications

被引：2

作者：

Carreras, Josep ^{[1
]}

Jambois, O. ^{[1
]}

Peralvarez, M. ^{[1
]}

Lebour, Y. ^{[1
]}

Garrido, B. ^{[1
]}

机构：

[1] Univ Barcelona, Dept Elect, IN2UB EME, E-08028 Barcelona, Spain

来源：

MICROELECTRONIC ENGINEERING | 2008年 / 85卷 / 12期

关键词：

Silicon; Nanocrystals; Silicon nanocrystals; Transport modeling; Flash memories; Nonvolatile memories;

D O I：

10.1016/j.mee.2008.09.034

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A compact model that can be used to reproduce both quasi-static and dynamic characteristics of basic MOS cells with embedded Si-nc is presented. The structure is modeled through a device-like complex matrix of tunnel junctions, resulting in a time-dependent non-linear system of differential equations that is numerically solved, including calculation of the capacitance matrix, analytical tunneling expressions (direct and Fowler-Nordheim) for electrons/holes, and derivation of the effective tunneling area. The threshold evolution is calculated by monitoring the charge at each Si-nc as a function of time. The model is successfully validated against experimental data, showing its applicability to predict program/erase characteristics of nanocrystal memories its well as threshold voltage bit-to-bit dispersion as a consequence of geometrical non-uniformities in the nanocrystal layer position and/or gate areal coverage. (C) 2008 Elsevier B.V. All rights reserved.

引用

页码：2378 / 2381

页数：4

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