A Graded Channel Dual-Material Gate Junctionless MOSFET for Analog Applications

This paper presents a graded channel dual material gate junctionless transistor (GC-DMGJLT) for analog applications. We studied various performance parameters of GC-DMGJLT and compared them with uniform channel dual material gate junctionless transistor (UC-DMGJLT) using Sentaurus TCAD device simulator. The simulation results specify the superiority of GC-DMGJLT that yields higher values of drain current (I-d), transconductance (gm) and cut-off frequency (f(t)) at the cost of slight increase in output transconductance (g(ds)). Furthermore, besides DIBL all other short channel parameters are also suppressed in graded channel device resulting in its superiority over uniform channel device. (C) 2018 The Authors. Published by Elsevier B.V.