Approaches to Realizing Sheet-Type Scanner with Scanning Light Source

被引:4
|
作者
Murase, Makoto [1 ]
Itagaki, Motoshi [2 ]
Miyabayashi, Takeshi [3 ]
Hayashi, Hideki [1 ]
Naka, Shigeki [4 ]
Okada, Hiroyuki [4 ]
机构
[1] Nagoya Municipal Ind Res Inst, Nagoya, Aichi 4560058, Japan
[2] Publ Fdn Chubu Sci & Technol Ctr, Nagoya, Aichi 4600008, Japan
[3] Nagoya Univ, Grad Sch Engn, Nagoya, Aichi 4648603, Japan
[4] Toyama Univ, Grad Sch Sci & Engn Educ, Toyama 9308555, Japan
关键词
FIELD-EFFECT TRANSISTORS; LARGE-AREA; FULL-COLOR; DIODES;
D O I
10.7567/JJAP.52.05DC21
中图分类号
O59 [应用物理学];
学科分类号
摘要
Organic devices have attracted much attention because it could realize the fabrication of lightweight and flexible devices. Among these devices is the sheet-type scanner. In order to fabricate organic devices on a film substrate, self-alignment (SA) techniques would be useful. First, SA techniques for an organic or oxide thin-film transistor (TFT) were introduced. After that, our study on the structure and property of a scanner device with a scanning light source were reported. Our device had organic photodiodes (OPDs) and organic light-emitting diodes (OLEDs) on the same substrate. The OLEDs were used as the scanning light source and SA-TFTs were used for the active device. The device output signal depended on the distance between reflecting electrodes of OPDs and OLEDs, and the color density of the scanned target was confirmed by the signal. (C) 2013 The Japan Society of Applied Physics
引用
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页数:4
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