Photoluminescence properties of U in SrBPO5 host: Effect of concentration and annealing temperature

被引:14
|
作者
Rout, Annapurna [1 ]
Mohapatra, M. [2 ]
Suriyamurthy, N. [1 ]
Panigrahi, B. S. [1 ]
机构
[1] Indira Gandhi Ctr Atom Res, Reactor Operat & Maintenance Grp, Kalpakkam 603102, Tamil Nadu, India
[2] Bhabha Atom Res Ctr, Div Radiochem, Mumbai 400085, Maharashtra, India
关键词
SrBPO5; Uranium; Photoluminescence; Color coordinates; THERMALLY STIMULATED LUMINESCENCE; TIME-RESOLVED PHOTOLUMINESCENCE; ACTINIDE IONS; URANIUM; SPECTROSCOPY; TRANSITIONS; SPECIATION; PHOSPHATE; CRYSTAL; SOLIDS;
D O I
10.1016/j.jlumin.2015.06.015
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
Strontium borophosphate (SrBPO5) with and without uranium doped samples were synthesized through solid state reaction route in air atmosphere at different annealing temperatures. The dopant ion concentration was varied between 1 and 8 mol%. X-ray diffraction studies confirmed the formation of single phase compound in all the samples without any impurity phase up to 8 mol% of the dopant ion. The overall morphology and particle size was confirmed by scanning electron microscopic studies which suggested the presence of uneven, agglomerated particles with less than 1 mu m individual size. It was observed that upon annealing at higher temperatures, the particles get agglomerated more and more with smooth boundaries. Photoluminescence (PL) studies confirmed stabilization of uranium as uranyl ion (UO22+) in the system. Based on the PL emission data concentration quenching was observed beyond 7 mol% of the dopant ion concentration. The critical distance (L-c) was estimated to be 3 angstrom suggesting Dexter type of energy transfer mechanism responsible for the quenching. The life time decay studies indicated the presence of two different types of environment around Uranyl ion. On annealing at temperatures beyond 900 degrees C the PL emission and decay time reduced drastically. It was concluded that on annealing at temperatures beyond 900 C, defect centres get agglomerated around the metal ion providing non radiative pathways for the energy to get dissipated thereby reducing the PL emission and decay time. Color coordinates were evaluated for the 7 mol% uranium doped sample annealed at 900 degrees C. The values suggested that the system can be used as a potential green emitting phosphor material. (C) 2015 Elsevier B.V. All rights reserved.
引用
收藏
页码:45 / 50
页数:6
相关论文
共 50 条
  • [31] Influence of annealing temperature on the photoluminescence properties of ZnO quantum dots
    Zhang, Xiangqiang
    Hou, Shili
    Mao, Huibing
    Wang, Jiqing
    Zhu, Ziqiang
    APPLIED SURFACE SCIENCE, 2010, 256 (12) : 3862 - 3865
  • [32] Effect of Annealing on Photoluminescence Properties in Zirconium Dioxide Nanotubes
    Vokhmintsev, A. S.
    Kamalov, R., V
    Petrenyov, I. A.
    Weinstein, I. A.
    VII INTERNATIONAL YOUNG RESEARCHERS' CONFERENCE - PHYSICS, TECHNOLOGY, INNOVATIONS (PTI-2020), 2020, 2313
  • [33] Effect of annealing on photoluminescence properties of neon implanted GaN
    Majid, Abdul
    Ali, Akbar
    Zhu, J. J.
    Wang, Y. T.
    Liu, W.
    Lu, G. J.
    Liu, W. B.
    Zhang, L. Q.
    Liu, Z. S.
    Zhao, D. G.
    Zhang, S. M.
    Jiang, D. S.
    Yang, H.
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2008, 41 (02)
  • [34] Annealing effect on the morphologies and photoluminescence properties of ZnO nanocombs
    Li, Qiang
    Chen, Yiqing
    Zhang, Xinhua
    Su, Yong
    Jia, Chong
    JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 2009, 70 (12) : 1482 - 1486
  • [35] Effect of synthesis annealing temperature & Yb3+ concentration on photoluminescence properties of monoclinic Gd2O3 phosphor
    Tamrakar R.K.
    Bisen D.P.
    Upadhyay K.
    Sahu I.P.
    Brahme N.
    Journal of Optics (India), 2015, 44 (04): : 337 - 345
  • [36] The Effect of Annealing, Synthesis Temperature and Structure on Photoluminescence Properties of Eu-Doped ZnO Nanorods
    Najafi, M.
    Haratizadeh, H.
    Ghezellou, M.
    JOURNAL OF NANOSTRUCTURES, 2015, 5 (02) : 129 - 135
  • [37] RE(Y, Er, Gd, La, Nd, Sm, Dy)-doped SrBPO5 colorful phosphors: Definition of structural unit cell parameters and optical properties
    Gul, G. Celik
    Kurtulus, F.
    OPTIK, 2017, 139 : 265 - 271
  • [38] Effect of annealing on transient photoluminescence properties of microstructured black silicon
    Key Laboratory of Weak Light Nonlinear Photonics of Ministry of Education, TEDA Applied Physics Institute and School of Physics, Nankai University, Tianjin
    300457, China
    不详
    Xinjiang
    844000, China
    Guangxue Xuebao, 5
  • [39] Effect of low-temperature annealing on photoluminescence of silicon nanocluster structures
    B. N. Romanyuk
    V. P. Melnik
    V. G. Popov
    I. M. Khatsevich
    A. S. Oberemok
    Semiconductors, 2010, 44 : 514 - 518
  • [40] Effect of low-temperature annealing on photoluminescence of silicon nanocluster structures
    Romanyuk, B. N.
    Melnik, V. P.
    Popov, V. G.
    Khatsevich, I. M.
    Oberemok, A. S.
    SEMICONDUCTORS, 2010, 44 (04) : 514 - 518