Nonstationary photocurrent in a Bi12SiO20 crystal grown in an argon atmosphere

被引:3
|
作者
Bryushinin, MA [1 ]
Sokolov, IA [1 ]
机构
[1] Russian Acad Sci, Inst Mech Engn Problems, St Petersburg 196140, Russia
关键词
Carrier Lifetime; Photorefractive Crystal; Debye Screening Length; Carrier Trapping; Maxwellian Relaxation Time;
D O I
10.1134/1.1262484
中图分类号
O59 [应用物理学];
学科分类号
摘要
A detailed investigation of the nonstationary photocurrent in crystals with a sillenite structure grown in an oxygen-free (argon) atmosphere is performed. Basic parameters of the photoinduced charge carriers in the crystals investigated, such as the mean carrier lifetime and mobility, the mean photoconductivity, the carrier diffusion length, and the Debye screening length, are determined. (C) 1999 American Institute of Physics. [S1063-7850(99)01205-7].
引用
收藏
页码:366 / 368
页数:3
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