Nonstationary photocurrent in a Bi12SiO20 crystal grown in an argon atmosphere

被引：3
|
作者：
Bryushinin, MA [1 ]
Sokolov, IA [1 ]
机构：
[1] Russian Acad Sci, Inst Mech Engn Problems, St Petersburg 196140, Russia
来源：
TECHNICAL PHYSICS LETTERS | 1999年 / 25卷 / 05期
关键词：
Carrier Lifetime; Photorefractive Crystal; Debye Screening Length; Carrier Trapping; Maxwellian Relaxation Time;
D O I：
10.1134/1.1262484
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A detailed investigation of the nonstationary photocurrent in crystals with a sillenite structure grown in an oxygen-free (argon) atmosphere is performed. Basic parameters of the photoinduced charge carriers in the crystals investigated, such as the mean carrier lifetime and mobility, the mean photoconductivity, the carrier diffusion length, and the Debye screening length, are determined. (C) 1999 American Institute of Physics. [S1063-7850(99)01205-7].
引用
收藏
页码：366 / 368
页数：3
相关论文
共 50 条
  • [1] Nonstationary photocurrent in a Bi12SiO20 crystal grown in an argon atmosphere
    M. A. Bryushinin
    I. A. Sokolov
    Technical Physics Letters, 1999, 25
  • [2] Metastable δ-Bi12SiO20 and its effect on the quality of grown single crystals of γ-Bi12SiO20
    Kyushu Univ, Fukuoka, Japan
    J Mater Res, 10 (2575-2582):
  • [3] Optical orientation of dipolar centers in Bi12SiO20 crystal grown in an oxygen-free atmosphere
    Grachev, Alexander I.
    Nippolainen, Ervin
    Kamshilin, Alexei A.
    ADVANCED LASER TECHNOLOGIES 2007, 2008, 7022
  • [4] MECHANISM OF NONSTATIONARY ELECTROOPTIC RESPONSE IN BI12SIO20 CRYSTALS
    BYKADOROV, AV
    KATSAVETS, NI
    LEONOV, EI
    ZHURNAL TEKHNICHESKOI FIZIKI, 1990, 60 (03): : 153 - 161
  • [5] Fast photogalvanic response of a Bi12SiO20 crystal
    Romashko, Roman V.
    Grachev, Alexander I.
    Kulchin, Yuri N.
    Kamshilin, Alexei A.
    OPTICS EXPRESS, 2010, 18 (26): : 27142 - 27154
  • [6] Crystallization habit of Bi12SiO20 grown by hydrothermal method
    He, Xiao-Ling
    Zhang, Chang-Long
    Hu, Zhang-Gui
    Huo, Han-De
    Zhou, Hai-Tao
    Wang, Jin-Liang
    Qin, Shi-Jie
    Rengong Jingti Xuebao/Journal of Synthetic Crystals, 2010, 39 (SUPPL.): : 199 - 202
  • [7] Defect analysis in Czochralski grown Bi12SiO20 crystals
    Kumaragurubaran, S
    Babu, SM
    Kitamura, K
    Takegawa, S
    Subramanian, C
    JOURNAL OF CRYSTAL GROWTH, 2001, 229 (01) : 233 - 237
  • [8] CHARACTERIZATION OF CZOCHRALSKI-GROWN AND HYDROTHERMAL-GROWN BI12SIO20
    LEIGH, WB
    LARKIN, JJ
    HARRIS, MT
    BROWN, RN
    JOURNAL OF APPLIED PHYSICS, 1994, 76 (02) : 660 - 666
  • [9] NONSTATIONARY ELECTROOPTICAL PHENOMENA IN BI12SIO20 MONOCRYSTALS, ALLOYED BY AL AND MN
    KATSAVETS, NI
    LEONOV, EI
    ZHURNAL TEKHNICHESKOI FIZIKI, 1986, 56 (10): : 1993 - 1995
  • [10] DECORATION OF DISLOCATIONS IN BI12SIO20 CRYSTALS BY ANNEALING IN A REDUCING ATMOSPHERE
    LIN, C
    WITT, AF
    JOURNAL OF CRYSTAL GROWTH, 1994, 140 (3-4) : 444 - 446
12345