Synthesis of Single- and Double-Wall Carbon Nanotubes by Gas Flow-Modified Catalyst-Supported Chemical Vapor Deposition

被引：0
|
作者：
Kishi, Naoki [1 ,2 ]
Sugai, Toshiki [1 ,2 ]
Shinohara, Hisanori [1 ,2 ]
机构：
[1] Nagoya Univ, Dept Chem, Nagoya, Aichi 4648602, Japan
[2] Nagoya Univ, Inst Adv Res, Nagoya, Aichi 4648602, Japan
来源：
IEICE TRANSACTIONS ON ELECTRONICS | 2009年 / E92C卷 / 12期
关键词：
carbon nanotubes; chemical vapor deposition; raman spectroscopy; transmission electron microscopy; CCVD; GROWTH;
D O I：
10.1587/transele.E92.C.1483
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The synthesis of single- and double-wall carbon nanotubes by gas flow-modified, catalyst-supported chemical vapor deposition (CCVD) is reported. We have investigated the gas flow condition dependence on the synthesis of carbon nanotubes (CNTs) by placing blocks in the CCVD reactor. Carbon nanotubes having large diameters are preferentially grown under turbulent flow conditions. This indicates that the diameter distribution of CNTs can be controlled by modification of the gas flow condition in the CCVD.
引用
收藏
页码：1483 / 1486
页数：4
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