Effect of high annealing temperature on giant tunnel magnetoresistance ratio of CoFeB/MgO/CoFeB magnetic tunnel junctions

被引：167

作者：

Hayakawaa, J.

Ikeda, S.

Lee, Y. M.

Matsukura, F.

Ohno, H.

机构：

[1] Hitachi Ltd, Adv Res Lab, Kokubunji, Tokyo 1858601, Japan

[2] Tohoku Univ, Elect Commun Res Inst, Lab Nanoelect & Spintron, Aoba Ku, Sendai, Miyagi 9808577, Japan

来源：

APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 23期

关键词：

ROOM-TEMPERATURE; THERMAL-STABILITY; DEPENDENCE;

D O I：

10.1063/1.2402904

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The authors report tunnel magnetoresistance (TMR) ratios as high as 472% at room temperature and 804% at 5 K in pseudo-spin-valve (PSV) CoFeB/MgO/CoFeB magnetic tunnel junctions (MTJs) annealed at 450 degrees C, which is approaching the theoretically predicted value. By contrast, the TMR ratios for exchange-biased (EB) SV MTJs with a MnIr antiferromagnetic layer are found to drop when they are annealed at 450 degrees C. Energy dispersive x-ray analysis shows that annealing at 450 degrees C induces interdiffusion of Mn and Ru atoms into the MgO barrier and ferromagnetic layers in EB-SV MTJs. Mechanisms behind the different annealing behaviors are discussed. (c) 2006 American Institute of Physics.

引用

页数：3

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