Turn-on delay of VCSEL and effect of carriers recombination

被引：0

作者：

Zhang, XX ^{[1
]}

Pan, W ^{[1
]}

Liu, YZ ^{[1
]}

Chen, JG ^{[1
]}

机构：

[1] Univ Elect Sci & Technol China, Natl Key Lab Opt Commun, Dept Optoelect Technol, Chengdu 610054, Peoples R China

来源：

APOC 2002: ASIA-PACIFIC OPTICAL AND WIRELESS COMMUNICATIONS; MATERIALS AND DEVICES FOR OPTICAL AND WIRELESS COMMUNICATIONS | 2002年 / 4905卷

关键词：

VCSELs; rate equations; turn-on delay; time evolution of carriers; Auger effect;

D O I：

10.1117/12.480967

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

It is well known that when the laser is turned on by increasing the device current from its initial value J(0) to the above-threshold value J greater than J(th), stimulated recombination is delayed by t(d), the time during which the carrier population rises to its threshold value. On the besis of the rate equations for quantum well VCSEL, a closed expression describing the time evolution of the carrier density within the turn-on period of a VCSEL has been derived for the case that the Auger effect is considered with a term proportional to the cube of the carrier density. The theoretic results are simulated with Simulink of MATLAB software. As a result, an explicit analytical expression for the turn-on delay of the VCSEL has also been deduced. Since the turn-on delay is an important parameter of a semiconductor laser, intensified studies on this parameter have been carried out in the past years.

引用

页码：567 / 571

页数：5

共 50 条

[21] INFLUENCE OF TRAPPING LEVELS ON MICROPLASMA TURN-ON DELAY TIME
PALEI, VM
TONKOSHKUR, NF
VIKULIN, IM
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1972, 6 (01): : 74 - +
[22] GENERALIZED EXPRESSIONS FOR THE TURN-ON DELAY IN SEMICONDUCTOR-LASERS
DIXON, RW
JOYCE, WB
JOURNAL OF APPLIED PHYSICS, 1979, 50 (07) : 4591 - 4595
[23] Valve amp turn-on delay adds automatic protection
Watts, M
ELECTRONICS WORLD, 2002, 108 (1796): : 31 - 31
[24] REDUCTION OF TURN-ON DELAY IN LASER DIODE OPTICAL SWITCH
IKEDA, M
ELECTRONICS LETTERS, 1983, 19 (02) : 53 - 54
[25] Turn-on jitter of zero-biased nearly single-mode VCSEL's
Zei, L
Obermann, K
Czogalla, T
Petermann, K
IEEE PHOTONICS TECHNOLOGY LETTERS, 1999, 11 (01) : 6 - 8
[26] Analytical expression for turn-on delay of long wavelength semiconductor lasers
Wang, Jialing
Chen, Jianguo
Bandaoti Guangdian/Semiconductor Optoelectronics, 19 (03): : 194 - 195
[27] Turn-on delay of QD and QW laser diodes: What is the difference?
Sokolovskii, G. S.
Dudelev, V. V.
Kolykhalova, E. D.
Deryagin, A. G.
Maximov, M. V.
Nadtochiy, A. M.
Kuchinskii, V. I.
Mikhrin, S. S.
Livshits, D. A.
Viktorov, E. A.
Erneux, T.
15TH RUSSIAN YOUTH CONFERENCE ON PHYSICS AND ASTRONOMY (PHYSICA.SPB), 2013, 461
[28] TURN-ON DELAY IN GALLIUM ARSENIDE LASERS OPERATED AT ROOM TEMPERATURE
KONNERTH, K
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1965, ED12 (09) : 506 - &
[29] Observation of Long Turn-On Delay in Pulsed Quantum Cascade Lasers
Cherotchenko, E. D.
Dudelev, V. V.
Mikhailov, D. A.
Losev, S. N.
Babichev, A., V
Gladyshev, A. G.
Novikov, I. I.
Lutetskiy, A., V
Veselov, D. A.
Slipchenko, S. O.
Pikhtin, N. A.
Karachinsky, L. Ya
Denisov, D., V
Kuchinskii, V., I
Kognovitskaya, E. A.
Egorov, A. Yu
Teissier, R.
Baranov, A. N.
Sokolovskii, G. S.
JOURNAL OF LIGHTWAVE TECHNOLOGY, 2022, 40 (07) : 2104 - 2110
[30] The effect of temperature of operation on the turn-on time delay of semiconductor lasers: full analytical and exact expression form
Hassan, M. R.
EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 2008, 41 (01): : 41 - 48

← 1 2 3 4 5 →