AlGaAs-based vertical-external-cavity surface-emitting laser exceeding 4 W of direct emission power in the 740-790 nm spectral range

被引：15

作者：

Kahle, Hermann ^{[1
]}

Nechay, Kostiantyn ^{[1
]}

Penttinen, Jussi-Pekka ^{[1
]}

Tukiainen, Antti ^{[1
]}

Ranta, Sanna ^{[1
]}

Guina, Mircea ^{[1
]}

机构：

[1] Tampere Univ Technol, Lab Photon, ORC, Korkeakoulunkatu 3, Tampere 33720, Finland

来源：

OPTICS LETTERS | 2018年 / 43卷 / 07期

基金：

芬兰科学院;

关键词：

SEMICONDUCTOR DISK LASER; DIODE-LASERS; ALEXANDRITE; GAASP; ALXGA1-XAS; REMOVAL; HAIR;

D O I：

10.1364/OL.43.001578

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

An optically pumped vertical-external-cavity surface-emitting laser (VECSEL) for direct emission in the 740 790 nm wavelength region is reported. The gain structure is based on 12 AlGaAs quantum wells. We demonstrate wavelength tuning between 747 nm and 788 nm and free-running operation with a maximum power of 4.24 W (pump power limited) for a heat sink temperature of 14 degrees C. This laser system addresses a spectral gap not currently covered by VECSEL technology and represents the most powerful VECSEL reported within the 7XX-nm wavelength region. (c) 2018 Optical Society of America

引用

页码：1578 / 1581

页数：4

共 48 条

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