High-quality, faceted cubic boron nitride films grown by chemical vapor deposition

被引：38
|
作者：
Zhang, WJ
Jiang, X
Matsumoto, S
机构：
[1] NIRIM, Tsukuba, Ibaraki 3050044, Japan
[2] Fraunhofer Inst Schicht & Oberflachentech, D-38108 Braunschweig, Germany
来源：
APPLIED PHYSICS LETTERS | 2001年 / 79卷 / 27期
关键词：
D O I：
10.1063/1.1428762
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Thick cubic boron nitride (cBN) films showing clear crystal facets were achieved by chemical vapor deposition. The films show the highest crystallinity of cBN films ever achieved from gas phase. Clear evidence for the growth via a chemical route is obtained. A growth mechanism is suggested, in which fluorine preferentially etches hBN and stabilizes the cBN surface. Ion bombardment of proper energy activates the cBN surface bonded with fluorine so as to enhance the bonding probability of nitrogen-containing species on the F-stabilized B (111) surface. (C) 2001 American Institute of Physics.
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页码：4530 / 4532
页数：3
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