Highly uniform and reliable resistive switching characteristics of a Ni/WOx/p+-Si memory device

被引：2

作者：

Kim, Tae-Hyeon ^{[1
,2
]}

Kim, Sungjun ^{[1
,2
]}

Kim, Hyungjin ^{[1
,2
]}

Kim, Min-Hwi ^{[1
,2
]}

Bang, Suhyun ^{[1
,2
]}

Cho, Seongjae ^{[3
]}

Park, Byung-Gook ^{[1
,2
]}

机构：

[1] Seoul Natl Univ, ISRC, Seoul 08826, South Korea

[2] Seoul Natl Univ, Dept Elect & Comp Engn, Seoul 08826, South Korea

[3] Gachon Univ, Dept Elect Engn, Seongnam Si 13120, Gyeonggi Do, South Korea

来源：

SOLID-STATE ELECTRONICS | 2018年 / 140卷

基金：

新加坡国家研究基金会;

关键词：

WOx RRAM; Bipolar resistive switching; Rapid thermal oxidation (RTO); MIS structure; Space-charge-limited current (SCLC);

D O I：

10.1016/j.sse.2017.10.015

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, we investigate the resistive switching behavior of a bipolar resistive random-access memory (RRAM) in a Ni/WOx/p(+)-Si RRAM with CMOS compatibility. Highly unifrom and reliable bipolar resistive switching characteristics are observed by a DC voltage sweeping and its switching mechanism can be explained by SCLC model. As a result, the possibility of metal-insulator-silicon (MIS) structural WOx-based RRAM's application to Si-based 1D (diode)-1R (RRAM) or 1T (transistor)-1R (RRAM) structure is demonstrated.

引用

页码：51 / 54

页数：4

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