Highly uniform and reliable resistive switching characteristics of a Ni/WOx/p+-Si memory device

被引：2
|
作者：
Kim, Tae-Hyeon [1 ,2 ]
Kim, Sungjun [1 ,2 ]
Kim, Hyungjin [1 ,2 ]
Kim, Min-Hwi [1 ,2 ]
Bang, Suhyun [1 ,2 ]
Cho, Seongjae [3 ]
Park, Byung-Gook [1 ,2 ]
机构：
[1] Seoul Natl Univ, ISRC, Seoul 08826, South Korea
[2] Seoul Natl Univ, Dept Elect & Comp Engn, Seoul 08826, South Korea
[3] Gachon Univ, Dept Elect Engn, Seongnam Si 13120, Gyeonggi Do, South Korea
来源：
SOLID-STATE ELECTRONICS | 2018年 / 140卷
基金：
新加坡国家研究基金会;
关键词：
WOx RRAM; Bipolar resistive switching; Rapid thermal oxidation (RTO); MIS structure; Space-charge-limited current (SCLC);
D O I：
10.1016/j.sse.2017.10.015
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, we investigate the resistive switching behavior of a bipolar resistive random-access memory (RRAM) in a Ni/WOx/p(+)-Si RRAM with CMOS compatibility. Highly unifrom and reliable bipolar resistive switching characteristics are observed by a DC voltage sweeping and its switching mechanism can be explained by SCLC model. As a result, the possibility of metal-insulator-silicon (MIS) structural WOx-based RRAM's application to Si-based 1D (diode)-1R (RRAM) or 1T (transistor)-1R (RRAM) structure is demonstrated.
引用
收藏
页码：51 / 54
页数：4
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