Energy-resolved electron spin dynamics at surfaces of p-doped GaAs

被引：13

作者：

Schneider, HC ^{[1
]}

Wüstenberg, JP

Andreyev, O

Hiebbner, K

Guo, L

Lange, J

Schreiber, L

Beschoten, B

Bauer, M

Aeschlimann, M

机构：

[1] Univ Kaiserslautern, Dept Phys, D-67653 Kaiserslautern, Germany

[2] Rhein Westfal TH Aachen, Inst Phys 2, D-52056 Aachen, Germany

[3] Virtual Inst Spin Elect, D-52056 Aachen, Germany

来源：

PHYSICAL REVIEW B | 2006年 / 73卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.73.081302

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Electron-spin relaxation at different surfaces of p-doped GaAs is investigated by means of spin, time, and energy-resolved two-photon photoemission. These results are contrasted with bulk results obtained by time-resolved Faraday rotation measurements as well as calculations of the Bir-Aronov-Pikus spin-flip mechanism. Due to the reduced hole density in the band bending region at the (100) surface the spin-relaxation time increases over two orders of magnitude towards lower energies. At the flat-band (011) surface a constant spin relaxation time in agreement with our measurements and calculations for bulk GaAs is obtained.

引用

页数：4

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