Energy-resolved electron spin dynamics at surfaces of p-doped GaAs

被引：13
|
作者：
Schneider, HC [1 ]
Wüstenberg, JP
Andreyev, O
Hiebbner, K
Guo, L
Lange, J
Schreiber, L
Beschoten, B
Bauer, M
Aeschlimann, M
机构：
[1] Univ Kaiserslautern, Dept Phys, D-67653 Kaiserslautern, Germany
[2] Rhein Westfal TH Aachen, Inst Phys 2, D-52056 Aachen, Germany
[3] Virtual Inst Spin Elect, D-52056 Aachen, Germany
来源：
PHYSICAL REVIEW B | 2006年 / 73卷 / 08期
关键词：
D O I：
10.1103/PhysRevB.73.081302
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Electron-spin relaxation at different surfaces of p-doped GaAs is investigated by means of spin, time, and energy-resolved two-photon photoemission. These results are contrasted with bulk results obtained by time-resolved Faraday rotation measurements as well as calculations of the Bir-Aronov-Pikus spin-flip mechanism. Due to the reduced hole density in the band bending region at the (100) surface the spin-relaxation time increases over two orders of magnitude towards lower energies. At the flat-band (011) surface a constant spin relaxation time in agreement with our measurements and calculations for bulk GaAs is obtained.
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页数：4
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