STT-MRAM for embedded memory applications from eNVM to Last Level Cache

被引：0

作者：

Thomas, Luc ^{[1
]}

Jan, Guenole ^{[1
]}

Le, Son ^{[1
]}

Serrano-Guisan, Santiago ^{[1
]}

Lee, Yuan-Jen ^{[1
]}

Liu, Huanlong ^{[1
]}

Zhu, Jian ^{[1
]}

Iwata-Harms, Jodi ^{[1
]}

Tong, Ru-Ying ^{[1
]}

Patel, Sahil ^{[1
]}

Sundar, Vignesh ^{[1
]}

Shen, Dongna ^{[1
]}

Yang, Yi ^{[1
]}

He, Renren ^{[1
]}

Haq, Jesmin ^{[1
]}

Teng, Zhongjian ^{[1
]}

Vinh Lam ^{[1
]}

Liu, Paul ^{[1
]}

Wang, Yu-Jen ^{[1
]}

Zhong, Tom ^{[1
]}

Wang, Po-Kang ^{[1
]}

机构：

[1] TDK Headway Technol, Milpitas, CA 95035 USA

来源：

2017 IEEE SOI-3D-SUBTHRESHOLD MICROELECTRONICS TECHNOLOGY UNIFIED CONFERENCE (S3S) | 2017年

关键词：

STT-MRAM; memory technology; embedded memory; data retention; SPIN;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Spin-Transfer-Torque Magnetic Random Access Memory (STT-MRAM) is emerging as a leading candidate for a variety of embedded memory applications ranging from embedded NVM to working memory and last level cache. In this paper, we review recent breakthroughs that have brought perpendicular STT-MRAM to the cusp of mass production.

引用

页数：4

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