A vertical cavity light emitting InGaN quantum well heterostructure

被引：62
|
作者：
Song, YK [1 ]
Zhou, H
Diagne, M
Ozden, I
Vertikov, A
Nurmikko, AV
Carter-Coman, C
Kern, RS
Kish, FA
Krames, MR
机构：
[1] Brown Univ, Div Engn, Providence, RI 02912 USA
[2] Brown Univ, Dept Phys, Providence, RI 02912 USA
[3] Hewlett Packard Co, Div Optoelect, San Jose, CA 95131 USA
来源：
APPLIED PHYSICS LETTERS | 1999年 / 74卷 / 23期
关键词：
D O I：
10.1063/1.124121
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A method is described for fabricating a vertical cavity light emitting structure for nitride semiconductors. The process involves the separation of a InGaN/GaN/AlGaN quantum well heterostructure from its sapphire substrate an its enclosure by a pair of high reflectivity, low loss dielectric mirrors to define the optical resonator. We have demonstrated a cavity Q factor exceeding 600 in initial experiments, suggesting that the approach can be useful for blue and near ultraviolet resonant cavity light emitting diodes and vertical cavity lasers. (C) 1999 American Institute of Physics. [S0003-6951(99)00823-2].
引用
收藏
页码：3441 / 3443
页数：3
相关论文
共 50 条
  • [1] Vertical cavity light emitting InGaN quantum well heterostructure
    Brown Univ, Providence, United States
    Appl Phys Lett, 23 (3441-3443):
  • [2] Optical cavity effects in InGaN/GaN quantum-well-heterostructure flip-chip light-emitting diodes
    Shen, YC
    Wierer, JJ
    Krames, MR
    Ludowise, MJ
    Misra, MS
    Ahmed, F
    Kim, AY
    Mueller, GO
    Bhat, JC
    Stockman, SA
    Martin, PS
    APPLIED PHYSICS LETTERS, 2003, 82 (14) : 2221 - 2223
  • [3] Optical cavity effects in InGaN/GaN quantum-well-heterostructure flip-chip light-emitting diodes
    Shen, YC
    Wierer, JJ
    Krames, MR
    Ludowise, MJ
    Misra, MS
    Ahmed, F
    Kim, AY
    Mueller, GO
    Bhat, JC
    Stockman, SA
    Martin, PS
    LIGHT -EMITTING DIODES: RESEARCH, MANUFACTURING, AND APPLICATIONS VIII, 2004, 5366 : 20 - 25
  • [4] Photon recycling white light emitting diode based on InGaN multiple quantum well heterostructure
    Nikolaev, VV
    Portnoi, ME
    Eliashevich, I
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 2001, 183 (01): : 177 - 182
  • [5] Resonant-cavity InGaN quantum-well blue light-emitting diodes
    Song, YK
    Diagne, M
    Zhou, H
    Nurmikko, AV
    Schneider, RP
    Takeuchi, T
    APPLIED PHYSICS LETTERS, 2000, 77 (12) : 1744 - 1746
  • [6] Photon quenching in InGaN quantum well light emitting devices
    Sarkissian, Raymond
    Roberts, Sean T.
    Yeh, Ting-Wei
    Das, Saptaparna
    Bradforth, Stephen E.
    O'Brien, John
    Dapkus, P. Daniel
    APPLIED PHYSICS LETTERS, 2013, 103 (04)
  • [7] InGaN/GaN quantum-well heterostructure light-emitting diodes employing photonic crystal structures
    Wierer, JJ
    Krames, MR
    Epler, JE
    Gardner, NF
    Craford, MG
    Wendt, JR
    Simmons, JA
    Sigalas, MM
    APPLIED PHYSICS LETTERS, 2004, 84 (19) : 3885 - 3887
  • [8] Quantum-Well-Embedded InGaN Quantum Dot Vertical-Cavity Surface-Emitting Laser and Its Photoelectric Performance
    Hua, Zinan
    Dong, Hailiang
    Jia, Zhigang
    Jia, Wei
    Shang, Lin
    Xu, Bingshe
    PHOTONICS, 2025, 12 (03)
  • [9] InGaN/GaN quantum well interconnected microdisk light emitting diodes
    Jin, SX
    Li, J
    Lin, JY
    Jiang, HX
    APPLIED PHYSICS LETTERS, 2000, 77 (20) : 3236 - 3238
  • [10] InGaN light-emitting diodes with quantum-well structures
    Nakamura, S
    GALLIUM NITRIDE AND RELATED MATERIALS, 1996, 395 : 879 - 887
12345