Photon quenching in InGaN quantum well light emitting devices

被引：6
|
作者：
Sarkissian, Raymond [1 ]
Roberts, Sean T. [1 ]
Yeh, Ting-Wei [1 ]
Das, Saptaparna [1 ]
Bradforth, Stephen E. [1 ]
O'Brien, John [1 ]
Dapkus, P. Daniel [1 ]
机构：
[1] Univ So Calif, Ctr Energy Nanosci, Los Angeles, CA 90089 USA
来源：
APPLIED PHYSICS LETTERS | 2013年 / 103卷 / 04期
关键词：
EFFICIENCY; PROBE; PUMP;
D O I：
10.1063/1.4816757
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
This work provides experimental evidence for photon quenching in InGaN and discusses its relevance to efficiency droop problem in InGaN-based light emitters. An equilibrium rate equation model demonstrates that radiative efficiency for this loss mechanism not only has a similar dependence on carrier density as Auger recombination process, but it also possesses the right magnitude making it difficult to distinguish between the two and possibly leading to errors in interpretation. The impact of photon quenching processes on device performance is emphasized by demonstrating loss of efficiency for spectral regions where there is experimental evidence for photon quenching. (C) 2013 AIP Publishing LLC. [http://dx.doi.org/10.1063/1.4816757]
引用
收藏
页数：4
相关论文
共 50 条
  • [1] Photon recycling white light emitting diode based on InGaN multiple quantum well heterostructure
    Nikolaev, VV
    Portnoi, ME
    Eliashevich, I
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 2001, 183 (01): : 177 - 182
  • [2] A vertical cavity light emitting InGaN quantum well heterostructure
    Song, YK
    Zhou, H
    Diagne, M
    Ozden, I
    Vertikov, A
    Nurmikko, AV
    Carter-Coman, C
    Kern, RS
    Kish, FA
    Krames, MR
    APPLIED PHYSICS LETTERS, 1999, 74 (23) : 3441 - 3443
  • [3] Vertical cavity light emitting InGaN quantum well heterostructure
    Brown Univ, Providence, United States
    Appl Phys Lett, 23 (3441-3443):
  • [4] InGaN/GaN quantum well interconnected microdisk light emitting diodes
    Jin, SX
    Li, J
    Lin, JY
    Jiang, HX
    APPLIED PHYSICS LETTERS, 2000, 77 (20) : 3236 - 3238
  • [5] InGaN light-emitting diodes with quantum-well structures
    Nakamura, S
    GALLIUM NITRIDE AND RELATED MATERIALS, 1996, 395 : 879 - 887
  • [6] InGaN Light Emitters: A comparison of Quantum Dot and Quantum Well based devices
    Wu, Yuh-Renn
    Lin, Yih-Yin
    Singh, Jasprit
    2008 CONFERENCE ON LASERS AND ELECTRO-OPTICS & QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE, VOLS 1-9, 2008, : 2271 - +
  • [7] Internal Efficiency of Staggered InGaN/InGaN Quantum-Well Light-Emitting Diodes
    Park, Seoung-Hwan
    Ahn, Doyeol
    Koo, Bun-Hei
    Kim, Jong-Wook
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2009, 54 (06) : 2464 - 2467
  • [8] Local internal quantum efficiency of a green light emitting InGaN/GaN quantum well
    Danhof, J.
    Schwarz, U. T.
    Meyer, T.
    Vierheilig, C.
    Peter, M.
    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2012, 249 (03): : 600 - 603
  • [9] Carrier leakage in InGaN quantum well light-emitting diodes emitting at 480 nm
    Pope, IA
    Smowton, PM
    Blood, P
    Thomson, JD
    Kappers, MJ
    Humphreys, CJ
    APPLIED PHYSICS LETTERS, 2003, 82 (17) : 2755 - 2757
  • [10] Tunability of InGaN/GaN quantum well light emitting diodes through current
    1600, American Institute of Physics Inc. (114):
12345