Spatial Carrier Confinement in Core-Shell and Multishell Nanowire Heterostructures

被引：66
|
作者：
Nduwimana, A.
Musin, R. N.
Smith, A. M.
Wang, Xiao-Qian [1 ]
机构：
[1] Clark Atlanta Univ, Dept Phys, Atlanta, GA 30314 USA
来源：
NANO LETTERS | 2008年 / 8卷 / 10期
基金：
美国国家科学基金会;
关键词：
D O I：
10.1021/nl8017725
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
We have derived an analytical effective-mass model and employed first-principles density functional theory to study the spatial confinement of carriers in core-shell and multishell structured semiconductor nanowires. The band offset effect is analyzed based on the subband charge density distributions, which is strongly dependent upon the strain relaxation. First-principles calculation results for spatially confined Si/Ge and GaN/GaP nanowires indicate accumulation of a Ge-core hole gas and a GaN-core electron gas, respectively, in agreement with experimental observations.
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页码：3341 / 3344
页数：4
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